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Molecular Beam Epitaxy

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Molecular Beam Epitaxy (MBE) is a method of depositing single crystals onto a desired surface, laying down layers of material with miniscule depths of as little as a single atom. Epitaxy is a means of depositing monocrystalline film on a monocrystalline substrate. Molecular beam epitaxy is a critical part of modern laser and semiconductor devices as well as opto-electronic, photovoltaic and magnetic applications.

Molecular Beam Epitaxy Manufacturers

  • SVT Associates, Inc. is a leading manufacturer of molecular beam epitaxy systems, atomic layer deposition equipment, and thin film deposition tools. Their products are utilized in both R&D and production environments.

Molecular Beam Epitaxy Systems

Molecular beam epitaxy takes place in a high vacuum or ultra high vacuum environment. MBE's slow deposition rate (generally less than 1000 nm per hour) allow the films created to grow epitaxially. This slow deposition rate requires that molecular beam epitaxy be performed in a proportionally better vacuum, in order to achieve impurity levels equal to other deposition techniques. Molecular beam epitaxy systems are most often used for research and development purposes andin production environments in the creation of silicon semiconductors. A key component of molecular beam epitaxy systems is creating the incredibly pure vacuum environments. Molecular beam epitaxy systems involve separate modules for the deposition process and the wafer loading process, though more than just two modules are often used.